French Hprobe and NY CREATES joined forces for Next-Gen Memory Testing

The NY CREATES (New York Center for Research, Economic Advancement, Technology, Engineering, and Science) is a world-leading R&D innovation hub and commercialization facilitator. The hub works with researchers in industry, academia, and national labs to leverage its state-of-the-art semiconductor-focused capabilities and resources spanning upstate New York and foster impactful partnerships with NY CREATES’ R&D teams through the ideation, incubation, and investment phases of technology development.

French Hprobe SAS, located in the Auvergne-Rhone-Alpes region and NY CREATES have announced a strategic partnership to elevate testing for emerging memory tech like MRAM and RRAM, foundational for the future of computing. This collaboration brings together NY CREATES’ cutting-edge R&D with an European field leader. Hprobe has developed a unique patented technology of multidimensional magnetic field generator for magnetic devices and sensors wafer level characterization and testing. Using this 3D generator technology, each magnetic field spatial axis is driven independently by users’ control.  Hprobe’s expertise in magnetic and resistive memory testing to build advanced equipment at the 300mm wafer scale. 

📣Why it matters:
 ✔️Enhanced Testing Capabilities: By developing new testing protocols, we’re paving the way for faster, more efficient memory validation and performance.
 ✔️Support for Key Technologies: MRAM and RRAM are critical for AI, IoT, and sustainable tech by offering faster speeds, non-volatility, and lower power consumption.
 ✔️Global Semiconductor Advancement: This project gives North American industries a platform to validate memory solutions, strengthening the semiconductor ecosystem.

Through this partnership, both parties are not just innovating; they’re shaping the future of high-performance, energy-efficient computing.
Stay tuned for groundbreaking developments!

Photo (c): Hprobe SAS, France

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